Conference paper

TESAŘ Radek, RŮŽIČKA Richard and ŠIMEK Václav. Resistant Gates for Polymorphic Electronics. In: Proceedings on UKSim-AMSS 8th European Modelling Symposium on Mathematical Modelling and Computer Simulation. Pisa: IEEE Computer Society, 2014, pp. 513-518. ISBN 978-1-4799-7411-5.
Publication language:english
Original title:Resistant Gates for Polymorphic Electronics
Title (cs):Rezistentní hradla pro polymorfní elektroniku
Pages:513-518
Proceedings:Proceedings on UKSim-AMSS 8th European Modelling Symposium on Mathematical Modelling and Computer Simulation
Conference:UKSim-AMSS 8th European Modelling Symposium on Mathematical Modelling and Computer Simulation
Place:Pisa, IT
Year:2014
ISBN:978-1-4799-7411-5
Publisher:IEEE Computer Society
Files: 
+Type Name Title +Size Last modified
iconedas_final_1570033993.doc379 KB2014-09-22 10:08:01
^ Select all
With selected:
Keywords
logic gates; polymorphic electronics; ambipolarity; organic semiconductors
Annotation
The field of electronics is exposed to emergence of advanced materials with semiconducting properties as a perspective replacement for conventional silicon technology. These materials may comprise, for example, organic semiconductors. Number of interesting properties, such as ambipolarity, are usually observed.

It's possible to imagine a transistor which can work under certain conditions in a P-channel mode whereas it achieves N-channel mode of conductivity in a different situation. This particular type of transistor with ambipolar behavior turns out to be useful for development of polymorphic electronics.

Its notion tends to simplify design procedure of complex digital circuits and it may also bring an additional features for a given application scenario. In fact, this is helpful especially in those situations when it's necessary to change the target environment where the device with polymorphic circuit blocks is required to be operating. For example, a solar power plant control circuit will have a different functions during the daylight period and at night.

The important characteristics is that its physical structure still remains to be the same. Above all, the impact of ambipolar property coupled with adoption of the emerging materials opens up a new direction for physical realization of the polymorphic building blocks.
BibTeX:
@INPROCEEDINGS{
   author = {Radek Tesa{\v{r}} and Richard R{\r{u}}{\v{z}}i{\v{c}}ka and
	V{\'{a}}clav {\v{S}}imek},
   title = {Resistant Gates for Polymorphic Electronics},
   pages = {513--518},
   booktitle = {Proceedings on UKSim-AMSS 8th European Modelling Symposium
	on Mathematical Modelling and Computer Simulation},
   year = {2014},
   location = {Pisa, IT},
   publisher = {IEEE Computer Society},
   ISBN = {978-1-4799-7411-5},
   language = {english},
   url = {http://www.fit.vutbr.cz/research/view_pub.php.en.iso-8859-2?id=10726}
}

Your IPv4 address: 54.198.210.67
Switch to IPv6 connection

DNSSEC [dnssec]